sot-323 plastic-encapsulate mosfets CJ3134KW n-channel power mosfet generral description this single n-channel mosfet has been designed using advanced power trench process to optimize the r ds(on). feature z high-side switching z low on-resistance z low threshold z fast switching speed application z drivers:relays, solenoids, lamps, hammers, displays, memories z battery operated systems z power supply converter circuits z load/power switching cell phones, pagers marking: 34k maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v dss 20 gate-source voltage v gs 12 v drain current -continuous i d 0.75 drain current -pulsed(note1) i dm 3 a power dissipation (note 2) p d 200 mw thermal resistance from junction to ambient r ja 625 /w storage temperature t j 150 junction temperature t stg -55 ~+150 so t -323 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a ,nov,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit on/off states drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 gate-threshold voltage(note 3) v gs(th) v ds =v gs , i d =250a 0.35 1 v gate-body leakage current i gss v ds =0v, v gs =12v 50 a zero gate voltage drain current i dss v ds =20v, v gs =0v 1 a v gs =4.5v, i d =650ma 380 v gs =2.5v, i d =550ma 450 drain-source on-state resistance(note 3) r ds(on) v gs =1.8v, i d =450ma 800 m ? forward transconductance g fs v ds =10v, i d =800ma 1 s dynamic characteristics(note 4) input capacitance c iss 120 output capacitance c oss 20 reverse transfer capacitance c rss v ds =16v,v gs =0v,f =1mhz 15 pf switching times (note 4) turn-on delay time t d (on) 6.7 rise time t r 4.8 turn-off delay time t d(off) 17.3 fall time t f v dd =10v, i d =500ma, v gs =4.5v,r g =10 ? 7.4 ns drain-source diode characteristics drain-source diode forward voltage (note 3) v sd i s =0.15a, v gs = 0v 1.2 v notes: 1. repetitive rating: pulse width lim ited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,nov,2013
01234 0 1 2 3 4 12345 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 1e-4 1e-3 0.01 0.1 1 10 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0.0 0.2 0.4 0.6 0.8 1.0 v gs =10.0v 4.5v 3.5v v gs =2.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =0.65a t a =25 pulsed v gs ?? r ds(on) CJ3134KW drain current i d (a) gate to source voltage v gs (v) v ds =5.0v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =250ua threshold voltage v gs =2.5v drain current i d (a) on-resistance r ds(on) ( ? ) i d ?? r ds(on) t a =25 pulsed v gs =4.5v v gs =1.8v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a ,nov,2013
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